Sciences & technologie. A, sciences exactes
Volume 0, Numéro 22, Pages 27-32
2004-12-31

Simulation Of Transport Phenomena In Inp



Authors : Belghachi A .

Abstract

In the present work we report results of the simulation of transport phenomena in InP under uniform electric fields in both transient and steady state regimes using semi-classical Ensemble Monte Carlo method (EMC). The EMC algorithm used consists mainly of the simulation of an ensemble of carriers and follows their history in parallel for a sequences of very short time intervals in three dimensional momentum and real spaces. After each sampling interval, data (drift velocity, energy…) is collected for each particle and the values are averaged. In our simulation an ensemble of 105 electrons are used. The program was written with Fortran 90 language and run on IBM PC(PIII, 800GHz). The obtained results are in good agreement with reported experimental data.

Keywords

Transport phenomena, Monte Carlo, semiconductor, scattering.

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