Journal of Scientific Research
Volume 1, Numéro 1, Pages 10-14
2011-06-01
Monte Carlo Simulation Of The Transport Phenomena In Hg0.8cd0.2te: Degeneracy Case
Authors : Dahbi N. . Daoudi M. . Belghachi M. .
Abstract
The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.
Keywords
Hg0.8Cd0.2Te semiconductor, degeneracy case, transport parameters, Monte Carlo simulation.
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