Journal of New Technology and Materials
Volume 1, Numéro 0, Pages 63-65
2011-12-05
Authors : Boudine A. . Benhizia K. . Kalla L. .
In this paper, we study two-dimensional spin polarized transport in semiconductors. Based on the some semiclassical considerations and taking account of the spin relaxation. We determined the relationship of the polarization as a function of time and the distance. And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport. This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.
Spin polarized transport, spintronic, spinfet, Semiconducteur
شنبي صورية
.
بن لخضر السعيد
.
محمودي حسين
.
ص 309-326.
Aissat A
.
Bellil W.
.
Bestam R.
.
Vilcot J. P.
.
pages 99-102.
Missoum I
.
pages 47-53.
Guernazi Daoud
.
Kail Fatiha
.
Roura Grabulosa Pere
.
Mourad Lilia
.
Chahed Larbi
.
pages 48-52.