Communication science et technologie
Volume 5, Numéro 1, Pages 67-76
2007-01-01
Effets Du Champ De Polarisation Sur Le Facteur De Transmission Et La Densité De Courant Tunnel Résonnant De Trous Dans La Structure Puits/double-barrière Aigan /gan /aigan Wûrtzite
Auteurs : N. Mokdad . K. Zitouni . A. Kadri .
Résumé
ln this work, we study the double barrier quantum weil würtzite GaN/ AIGaN heterostructures where a polarization field of order 1MY/cm is present. This field is due to the algebraic sum of two contributions: the spontaneous and the piezoelectric polarizations. The calculations of hole transmission amplitudes and hole resonant tunneling current are carried out within the envelope function and the transfer matrix methods through the 6x6 Rachba-Sheka Hamiltonian where strain effects are taken into account via the Pikus-Bir. Hamiltonian and polarization effects are introduced via a piezoelectric tensor. Our results show that when the GaN weIl and the AIGaN barrier are biaxially strained with piezoelectric and spontaneous polarizations, the number of peaks related to heavy and light holes increases and the energy levels are pushed to the bottom of the quantum weil owing to the fact that the weil becomes triangular. We also notice that both of the hole transmission and the resonant tunneling current increases as a result of a decrease ofthe width of the peaks at half maximum.
Mots clés
Hétérosrtuctures würtzite, GaN/AlosG'4uN, polarisation piézo-électrique, polarisation spontanée, contrainte biaxiale, Facteur de Transmission, Courant Tunnel Résonnant, Matrice de Transfert, champ cristallin.
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