Communication science et technologie
Volume 1, Numéro 1, Pages 20-25
2002-06-01
Influence Of The Different Ion Implantation Parameters On The Phenomena Occurring During Ion Bombudment In Sio2"
Authors : A. Abbad . A. Belaidi . .
Abstract
The ionie implantation technology has become a very useful technique in research; and has revolutionized the microelectronics industry. Computer Modeling are used to study ion-solid interaction. The Binary Collision Approximation (BeA) simulation is a well suited approach for this study. ln this work, we simulate the ion-solid interaction-using TRIM code in the case of silicon dioxide (.fJi02) targets for different ions and with different energies, and several angles of incidence. The emphasis was made on heavy ions (Cu, Fe and. Ni) to see the influence of mass parameters, the angle of incidence and the energy range on the ion and recoil distributions. The results obtained are in good agreement with the theory
Keywords
ion-solid.
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