I-V Characteristics Model For AlGaN/GaN HEMTs Using Tcad-Silvaco

Douara, Abdelmalek; Djellouli, Bouaza; Rabehi, Abdelaziz; Ziane, Abderrezzak; Belkadi, Nabil

Journal of New Technology and Materials
Volume 4, Numéro 2, Pages 19-24
2014-12-25

I-v Characteristics Model For Algan/gan Hemts Using Tcad-silvaco

Authors : Douara Abdelmalek . Djellouli Bouaza . Rabehi Abdelaziz . Ziane Abderrezzak . Belkadi Nabil .

Abstract

We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 µm.