BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA

Benhaoua, B; Kerbache, T; Chari, A; Gorochov, O

Sciences & technologie. A, sciences exactes
Volume 0, Numéro 20, Pages 51-56
2003-12-31

Behaviour Of Plasma Hydrogenated N-type Silicon In Aqueous Fluoride Media

Authors : Benhaoua B . Kerbache T . Chari A . Gorochov O .

Abstract

In this paper we have investigated the electrochemical behaviour, in the dark, of hydrogenated ntype silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential Vfb. The results are compared with non-hydrogenated n-Si. To explain this results we had proposed electro- chemical reactionary mechanism, in which one of the species created by the plasma accelerates the oxidation of the silicon even at anodic polarisation. This reaction is SiH2 2Fatt SiF2 2e H2       through it two electrons are injected in the conduction band. Then we had concluded that the mass loss and porous material formation is seriously affected by the hydrogenation.