Revue des sciences et sciences de l’ingénieur
Volume 7, Numéro 1, Pages 21-27

Comparative Numerical Simulation Between P And N-type Substrate Of Heterojunction With Intrinsic Silicon Solar Cell

Authors : Zarede Toufik . Lidjici Hamza . Zoukel Abdelhalim . Mahrane Achour .


This work presents a comparative numerical simulation between p and n- type substrate of the heterojunction with intrinsic silicon solar cell. The first heterojunction with intrinsic in silicon solar cell is composed with 100 µm of silicon p-type wafer with 1,5.1016 cm-3 acceptor concentration, and the second heterojunction with intrinsic in silicon structure is composed with 100 µm of silicon n-type wafer with 1,5.1016 cm-3 donor concentration, The effective average electron and hole lifetime for the substrate p or n considered in our modeling they are equal. A high photovoltaic efficiency conversion is about 21.43% for p-type wafer and 22.8% for n-type wafer was obtained.


silicium ; hétérojonction ; cellule solaire

Simulation Study And Analysis Of Zno/sio2/si Sis Heterojunction Solar Cell

Ziani Nora .  Bouaraba F. .  Belkaid M.s . 
pages 72-76.

Numerical Simulation And Optimization Of Performances Of A Solar Cell Based On Cdte

Ferouani A. M. .  Merad Boudia M. R. .  Rahmoun K. . 
pages 58-67.

Effect Of Junction Quality On The Performance Of A Silicon Solar Cell

Zerbo I. .  Zoungrana M. .  Ouedraogo A. .  Bathiebo D. J. . 
pages 1012-1026.