SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE | ASJP

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Volume 10, Numéro 10, Pages 59-64
2014-05-12

Small-signal Modeling Of Phemts And Analysis Of Their Microwave Performance

Auteurs : Hemaizia Z . Sengouga N . Missous M .

Résumé

Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate

Mots clés

small signal modelling, pHEMT, extraction.

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