Impact of NBTI Stress on VDMOSFET Regions | ASJP

Algerian Journal of Signals and Systems
Volume 3, Numéro 2, Pages 65-69
2018-06-30

Impact Of Nbti Stress On Vdmosfet Regions

Authors : Merah Sidi Mohammed . Nadji Bouchra .

Abstract

In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.

Keywords

NBTI, C-V, VDMOSFET regions

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