Journal of New Technology and Materials
Volume 1, Numéro 0, Pages 59-62

Numerical Analysis Of Gaas Mesfets Opfet

Authors : Hamma I. . Saidi Y. . Zaabat M. . Azizi C. .

Abstract

A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor) doped uniformly .the model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky . the 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.

Keywords

2-D modeling potential distribution, Photodetector, Photovoltage

Numerical Simulation Of Radiation Damage On The Device Performance Of Gaas Mesfets

Beddiafi Y. .  Saadoune A. .  Dehimi L. . 
pages 68-72.


Optoelectronic Properties Of Nanosized Gaas

Eloud T. .  Gueddim A. .  Bouarissa N. . 
pages 116-122.


A Comprehensive Nonlinear Model For Gaas Mesfet Transistor

Mellal Saida .  Azizi Cherifa .  Zaabat Mourad .  Ziar Toufik .  Kaddour Chahrazed .  Azizi Mounir . 
pages 12-17.


Electronic Structure Calculation Of The Gaas/alas Quantum Dot Superlattices

Kanouni F. .  Brezini A. .  Sekkel N. .  Saidane A. .  Chalabi D. .  Mostefa A. . 
pages 55-58.