Numerical analysis of GaAs MESFETs OPFET | ASJP

Journal of New Technology and Materials
Volume 1, Numéro 0, Pages 59-62
2011-12-05

Numerical Analysis Of Gaas Mesfets Opfet

Authors : Hamma I. . Saidi Y. . Zaabat M. . Azizi C. .

Abstract

A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor) doped uniformly .the model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky . the 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.

Keywords

2-D modeling potential distribution, Photodetector, Photovoltage

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Etude Analytique Des Fluctuations A Hautes Frequences Dans La Diode Schottky Varactor A La Base De Gaas.

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