Communication science et technologie
Volume 3, Numéro 1, Pages 7-12
2004-12-01

Numerical Simulation Of Transient Characteristics Of Power Igbt Device And A Study On Its Short Circuit.



Authors : Ly. Benbaltouche . A. Soualem .

Abstract

ln recent years, a new power semiconductor switching deviee called the Insulated Gate Bipolar Transistor (IGBT) has been widely used in new power electronics application which are: adjustable speed motor drives, appliance controls and robotics/ numerical controls and it's was the most commercially advanced deviees. The challenge of simulation in power electronics was to predict and understand the global behavior of various topologies of deviees. For years, this fact could be observed in microelectronics whereas ifl power electronics simulation has most/y been restricted to system design.

Keywords

Modeling, Simulation, Commutation, short-Circuit IGEr,

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