Journal of New Technology and Materials
Volume 4, Numéro 1, Pages 138-142

Spectroscopic Ellipsometry Characterization Of Thin Films Deposited On Silicon Substrate

Authors : Benzitouni S. . Mahdjoub A. . Zaabat M. .

Abstract

In this work we used spectroscopic ellipsometry to study the optical properties of thin films deposited on silicon substrates. Analysis of the ellipsometric spectra allows determining the thickness of the deposited films and the dispersion of their optical indices. The proposed method is to develop a theoretical model to calculate the ellipsometric angles as function of the wavelength of the incident light. The theoretical model is based on the theory of propagation of electromagnetic waves in a stratified medium and effective medium approximation of Bruggman. The theoretical ellipsometric spectrum will be adjusted to the measured spectrum to determine the optical characteristics of the deposited films. In the case of silicon oxynitride thin films this analysis allows among others to determine the chemical composition of the deposited film and to detect any index gradient in the layer.

Keywords

thin film, ellipsometry, silicon oxynitride, optical properties

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