Revue des sciences et sciences de l’ingénieur
Volume 1, Numéro 1, Pages 22-26
2010-06-01
Authors : Selmane N . Hamdadou N. E . Bouhmidi M . Chalabi D . Saidane A .
Bi2 S3 thin films have been prepared by chemical bath deposition method using bismuth nitrate Bi (NO3)3 and thioacetamide CH3 -CS-NH2 (TAM) as a sulfide ion source, The various preparative parameters were optimized to obtain good quality thin films, Bi2 S3 thin films were prepared without complexing agent and with the Na2 EDTA as a complexing agent on an amorphous glass substrate, The structural characterization and the effect of the complexing agent on the properties of Bi2 S3 have been carried out by the X-ray diffraction analysis (XRD)., X-ray diffractograms indicate that the films are polycrystalline in nature.
Bismuth, Chalcogenides, Chemical deposition Thin films, Thioacetamide.
Sabrina Roguai
.
Abdelkader Djelloul
.
pages 94-100.
Khechba Mourad
.
pages 72-75.
Lafane S.
.
Kerdja T.
.
Abdelli-messaci S.
.
Khereddine Y.
.
Kechouane M.
.
pages 53-58.
Medjaldi M.
.
Touil O.
.
Zaabat M.
.
Boudine B.
.
Halimi O.
.
Sebais M.
.
pages 77-80.
Abbas Soumaia
.
Ben Haoua Atman
.
Ben Haoua Boubaker
.
Rahal Achour
.
pages 106-111.