Communication science et technologie
Volume 16, Numéro 1, Pages 36-47
2018-01-01

Current Transportin Au/span/n-gaas Structures From Current-voltage-temperature Characteristics



Authors : Djeghlouf Asmaa . Hamri Djilalia . Teffahi Abdelkader . Saidane Abdelkader . Henini Mohamed .

Abstract

Current–voltage (I–V) characteristics of Au/SPAN/n-GaAs Schottky barrier diodes(SBDs) have been investigated in the wide temperature range of 80–300 K. Zero-bias barrier height (ΦB0) and ideality factor (n) are temperature dependent, withΦB0 increasing and n decreasing with increasing temperature. ΦB0 versus n, and (n-1-1) versus q/2kT plots were drawn to obtain an evidence of Gaussian distribution (GD) of interface Barrier Heights.Plots show relatively important standard deviation values that indicate interface inhomogeneities and complex current transport through the interface.Temperature dependent I–V characteristics of Au/SPAN/n-GaAs SBDs have successfully explained current transport in these devices. It is concluded that current transport is TE dominated with double-Gaussian distribution of SBHs rather than other mechanisms.

Keywords

I–V-T characteristics, Current transport, Gaussian distribution (GD),Schottky barrier diode,SPAN

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