Communication science et technologie
Volume 15, Numéro 1, Pages 42-51
2017-01-01
Electrical And Interface Properties Of Mbe Grown Fe/n-si0.85ge0.15 (111) Schottky Barrier Diodes
Authors : Hamri D. . Teffahi A. . Saidane Abdelkader . Chalabi D. . Djeghlouf A. .
Abstract
Current–voltage characteristics of (111) oriented Fe/n-Si0.85Ge0.15 metal–semiconductor Schottky barrier diode, deposed by Molecular Beam Epitaxy, are investigated at room temperature. Using thermionic emission theory, forward bias I–V characteristics are analyzed to estimate Schottky diode parameters. Electrical parameters, such as ideality factor, zero-bias barrier height and series resistance are calculated using two different methods. Results show three distinct linear regions in ln(I)–ln(V) plots, indicating ohmic, trap-charge limited current and space-charge limited-current conduction mechanisms. Energy distribution of interface states was obtained from forward bias I–V measurements by taking into account bias dependence of effective barrier height and ideality factor. I-V characteristics confirmed that series resistance distribution and interfacial layer formation are important parameters that influence electrical properties of device.
Keywords
Keywords: Electrical characterization / I-V measurement / Fe-Si1-xGex / Schottky diode / NSS Energy dependence.
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